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| UFT150-28 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI UFT150-28 is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG MAXIMUM RATINGS ID VDSS PDISS TJ TSTG JC 26 A 65 V 400 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 0.44 OC/W 1 = DRAIN 2 = DRAIN(2) 3 = GATE(1) 4 = GATE(2) 5 = SOURCE (1&2) -CASE CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) VDS(on) gfs Ciss Coss Crss Gps ID = 50 mA VDS = 28 V VDS = 0 V TC = 25 C O NONE TEST CONDITIONS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 2.5 1.0 1.0 2.0 3.0 3.0 180 200 20 12 55 10:1 14 65 --6.0 1.5 UNITS V mA A V V mhos pF ID =100 mA ID = 5.0 A ID = 2.5 A VDS = 28 V VDD = 28 V IDQ = 2 X 100 mA POUT = 200 W f = 225 MHz dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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